Specifications
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Osram Opto Semiconductor |
| Product Category | Phototransistors |
| RoHS |
|
| Type | Silicon NPN Phototransistor |
| Product | Phototransistors |
| Rise Time | - |
| Maximum On-State Collector Current | 15 mA |
| Fall Time | - |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 165 mW |
| Product Type | Phototransistors |
| Lens Color/Style | Black |
| Package / Case | T-1 |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Collector-Emitter Breakdown Voltage | 35 V |
| Collector-Emitter Saturation Voltage | 200 mV |
| Wavelength | 900 nm |
| Length | 4 mm |
| Width | 4 mm |
| Height | 5.2 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 100 C |
| Qualification | AEC-Q101 |
| Operating Supply Voltage | - |
| Propagation Delay - Max | - |
| Output Current | - |
| Part # Aliases | Q62702P0941 |
| Brand | OSRAM Opto Semiconductors |
| Light Current | 5 mA |
| Peak Wavelength | 900 nm |
| Dark Current | 15 mA |
| Half Intensity Angle Degrees | 12 deg |
| Factory Pack Quantity | 2000 |
| Subcategory | Optical Detectors and Sensors |
| Unit Weight | 0.007055 oz |
